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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Fig.1 simplified outline (TO-220) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -200 -150 -5 -2 -3 UNIT V V V A A W ae ae Open collector TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-0.5mA; IE=0 IE=-0.5mA; IB=0 IC=-500m A;IB=-50m A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.4A ; VCE=-10V IC=-0.4A ; VCE=-10V 40 5 MIN -150 -200 -5 2SB546A SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V -1.0 -50 -50 240 |I |I V A A hFE classifications M 40-80 L 60-120 K 100-200 HAN INC SEM GE OND IC TOR UC MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB546A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB546A SEM GE HAN INC OND IC TOR UC 4 |
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